STH175N4F6-6AG
Description
These devices are N-channel Power MOSFETs developed using the STripFET™ F6 technology with a new trench gate structure. The resulting Power MOSFETs exhibit very low RDS(on) in all packages.
Key Features
- Internal schematic diagram D(TAB) D(TAB) Order codes STH175N4F6-2AG STH175N4F6-6AG VDS 40 V RDS(on) max ID 2.4 mΩ 120 A
- Designed for automotive applications and AEC-Q101 qualified
- Very low on-resistance
- Very low gate charge
- High avalanche ruggedness
- Low gate drive power loss
