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STH175N4F6-6AG - N-channel Power MOSFET

This page provides the datasheet information for the STH175N4F6-6AG, a member of the STH175N4F6-2AG N-channel Power MOSFET family.

Description

These devices are N-channel Power MOSFETs developed using the STripFET™ F6 technology with a new trench gate structure.

The resulting Power MOSFETs exhibit very low RDS(on) in all packages.

Table 1.

Features

  • TAB 2 3 1 H2PAK-2 TAB 7 1 H2PAK-6 Figure 1. Internal schematic diagram D(TAB) D(TAB) Order codes STH175N4F6-2AG STH175N4F6-6AG VDS 40 V RDS(on) max ID 2.4 mΩ 120 A.
  • Designed for automotive.

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Datasheet Details

Part number STH175N4F6-6AG
Manufacturer STMicroelectronics
File Size 564.96 KB
Description N-channel Power MOSFET
Datasheet download datasheet STH175N4F6-6AG Datasheet
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Full PDF Text Transcription

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STH175N4F6-2AG, STH175N4F6-6AG Automotive-grade N-channel 40 V, 1.9 mΩ typ.,120 A STripFET™ F6 Power MOSFETs in H²PAK-2 and H²PAK-6 packages Datasheet - production data Features TAB 2 3 1 H2PAK-2 TAB 7 1 H2PAK-6 Figure 1. Internal schematic diagram D(TAB) D(TAB) Order codes STH175N4F6-2AG STH175N4F6-6AG VDS 40 V RDS(on) max ID 2.4 mΩ 120 A • Designed for automotive applications and AEC-Q101 qualified • Very low on-resistance • Very low gate charge • High avalanche ruggedness • Low gate drive power loss Applications • Switching applications G(1) S(2, 3) H2PAK-2 G(1) S(2, 3, 4, 5, 6, 7) H2PAK-6 AM14551V1 Description These devices are N-channel Power MOSFETs developed using the STripFET™ F6 technology with a new trench gate structure.
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