STH270N8F7-6 Description
These N-channel Power MOSFETs utilize STripFET F7 technology with an enhanced trench gate structure that results in very low on-state resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching. STH270N8F7-2, STH270N8F7-6, STP270N8F7 Electrical ratings 1 Electrical ratings Table 1. ratings Symbol Parameter VDS Drain-source voltage VGS Gate-source voltage ID (1) Drain...
STH270N8F7-6 Key Features
- Among the lowest RDS(on) on the market
- Excellent FoM (figure of merit)
- Low Crss/Ciss ratio for EMI immunity
- High avalanche ruggedness