STI34N65M5
Overview
These devices are N-channel MDmesh™ V Power MOSFETs based on an innovative proprietary vertical process technology, which is combined with STMicroelectronics’ well-known PowerMESH™ horizontal layout structure. The resulting product has extremely low onresistance, which is unmatched among siliconbased Power MOSFETs, making it especially suitable for applications.
- Worldwide best RDS(on) * area
- Higher VDSS rating and high dv/dt capability
- Excellent switching performance
- 100% avalanche tested
