STI34N65M5 Datasheet

The STI34N65M5 is a N-channel Power MOSFET.

Datasheet4U Logo
Part NumberSTI34N65M5
ManufacturerSTMicroelectronics
Overview These devices are N-channel MDmesh™ V Power MOSFETs based on an innovative proprietary vertical process technology, which is combined with STMicroelectronics’ well-known PowerMESH™ horizontal layout s. Order codes VDS @ TJmax STB34N65M5 STI34N65M5 STP34N65M5 710 V STW34N65M5 RDS(on) max 0.11 Ω ID 28 A
* Worldwide best RDS(on) * area
* Higher VDSS rating and high dv/dt capability
* Excellent switching performance
* 100% avalanche tested Applications
* Switching applications ' 3 !-.
Part NumberSTI34N65M5
DescriptionN-Channel MOSFET
ManufacturerInchange Semiconductor
Overview isc N-Channel MOSFET Transistor FEATURES ·Drain Current –ID=28A@ TC=25℃ ·Drain Source Voltage- : VDSS= 650V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 110mΩ(Max) ·100% avalanche tested ·Mini.
*Drain Current
*ID=28A@ TC=25℃
*Drain Source Voltage- : VDSS= 650V(Min)
*Static Drain-Source On-Resistance : RDS(on) = 110mΩ(Max)
*100% avalanche tested
*Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS
*Switching application ABSOLUTE MAXIMUM RATINGS(.