STL110N10F7 Overview
Description
S(1, 2, 3) 12 34 Top View AM15540v2 This N-channel Power MOSFET utilizes STripFET F7 technology with an enhanced trench gate structure that results in very low on-state resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching. Product status link STL110N10F7 Product summary Order code STL110N10F7 Marking 110N10F7 Package PowerFLAT 5x6 Packing Tape and reel DS9392 - Rev 6 - March 2020 For further information contact your local STMicroelectronics sales office.
Key Features
- Among the lowest RDS(on) on the market
- Excellent FoM (figure of merit)
- Low Crss/Ciss ratio for EMI immunity
- High avalanche ruggedness ID 107 A PTOT 136 W D(5, 6, 7
