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STL12N65M5 - N-channel Power MOSFET

General Description

This device is an N-channel MDmesh™ V Power MOSFET based on an innovative proprietary vertical process technology, which is combined with STMicroelectronics’ well-known PowerMESH™ horizontal layout structure.

Key Features

  • 1 2 3 4 PowerFLATTM 5x6 HV Figure 1. Internal schematic diagram '  .
  •  6  $0Y Order code STL12N65M5 VDSS 710 V RDS(on) max 0.530 Ω ID 8.5 A.
  • Outstanding RDS(on).
  • area.
  • Extremely large avalanche performance.
  • Gate charge minimized.
  • Very low intrinsic capacitance.
  • 100% avalanche tested.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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STL12N65M5 N-channel 650 V, 0.475 Ω typ., 8.5 A MDmesh™ V Power MOSFET in a PowerFLAT™ 5x6 HV package Datasheet − production data Features 1 2 3 4 PowerFLATTM 5x6 HV Figure 1. Internal schematic diagram '  *  6  $0Y Order code STL12N65M5 VDSS 710 V RDS(on) max 0.530 Ω ID 8.5 A • Outstanding RDS(on)*area • Extremely large avalanche performance • Gate charge minimized • Very low intrinsic capacitance • 100% avalanche tested Applications • Switching applications Description This device is an N-channel MDmesh™ V Power MOSFET based on an innovative proprietary vertical process technology, which is combined with STMicroelectronics’ well-known PowerMESH™ horizontal layout structure.