Download STL170N4LF8 Datasheet PDF
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STL170N4LF8 Description

The STL170N4LF8 is a 40 V N-channel enhancement mode Power MOSFET designed in STripFET F8 technology featuring an enhanced trench gate structure. It ensures a state-of-the-art of figure of merit for very low on-state resistance while reducing internal capacitances and gate charge for faster and more efficient switching. For engineering samples marking, see Section 3.3:.

STL170N4LF8 Key Features

  • MSL1 grade
  • 175 °C maximum operating junction temperature
  • 100% avalanche tested
  • Low gate charge Qg