STL220NS6F7 Description
This N-channel Power MOSFET utilizes STripFET™ F7 technology with an enhanced trench gate structure that results in very low onstate resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching. S(1, 2, 3) 12 34 Top View AM15540v3 Order code STL220NS6F7 Table 1: Device summary Marking 220NS6F7 Package PowerFLATTM 5x6 Packaging Tape and reel August 2015 DocID028256 Rev...
STL220NS6F7 Key Features
- Among the lowest RDS(on) on the market
- Excellent figure of merit (FoM)
- Embedded Schottky diode
- Low Crss/Ciss ratio for EMI immunity
- High avalanche ruggedness