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STL225N6F7AG Datasheet N-CHANNEL POWER MOSFET

Manufacturer: STMicroelectronics

General Description

This N-channel Power MOSFET utilizes STripFET™ F7 technology with an enhanced trench gate structure that results in very low onstate resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching.

Order code STL225N6F7AG Table 1: Device summary Marking Package 225N6F7 PowerFLATTM 5x6 Packaging Tape and reel March 2017 DocID028557 Rev 3 This is information on a product in full production.

Overview

STL225N6F7AG Automotive-grade N-channel 60 V, 1.2 mΩ typ., 120 A STripFET™ F7 Power MOSFET in a PowerFLAT™ 5x6 package Datasheet - production data Figure 1: Internal schematic.

Key Features

  • Order code STL225N6F7AG V DS 60 V RDS(on) max 1.4 mΩ ID 120 A.
  • AEC-Q101 qualified.
  • Among the lowest RDS(on) on the market.
  • Excellent FoM (figure of merit).
  • Low Crss/Ciss ratio for EMI immunity.
  • High avalanche ruggedness.
  • Wettable flank package.