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STL225N6F7AG - N-CHANNEL POWER MOSFET

Description

This N-channel Power MOSFET utilizes STripFET™ F7 technology with an enhanced trench gate structure that results in very low onstate resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching.

Features

  • Order code STL225N6F7AG V DS 60 V RDS(on) max 1.4 mΩ ID 120 A.
  • AEC-Q101 qualified.
  • Among the lowest RDS(on) on the market.
  • Excellent FoM (figure of merit).
  • Low Crss/Ciss ratio for EMI immunity.
  • High avalanche ruggedness.
  • Wettable flank package.

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Datasheet preview – STL225N6F7AG

Datasheet Details

Part number STL225N6F7AG
Manufacturer STMicroelectronics
File Size 810.13 KB
Description N-CHANNEL POWER MOSFET
Datasheet download datasheet STL225N6F7AG Datasheet
Additional preview pages of the STL225N6F7AG datasheet.

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Full PDF Text Transcription

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STL225N6F7AG Automotive-grade N-channel 60 V, 1.2 mΩ typ., 120 A STripFET™ F7 Power MOSFET in a PowerFLAT™ 5x6 package Datasheet - production data Figure 1: Internal schematic diagram Features Order code STL225N6F7AG V DS 60 V RDS(on) max 1.4 mΩ ID 120 A  AEC-Q101 qualified  Among the lowest RDS(on) on the market  Excellent FoM (figure of merit)  Low Crss/Ciss ratio for EMI immunity  High avalanche ruggedness  Wettable flank package Applications  DC-DC converter for H.E.V. (hybrid electric vehicle) Description This N-channel Power MOSFET utilizes STripFET™ F7 technology with an enhanced trench gate structure that results in very low onstate resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching.
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