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STL30P3LLH6 - P-Channel Power MOSFET

General Description

This device is a P-channel Power MOSFET developed using the STripFET F6 technology, with a new trench gate structure.

The resulting Power MOSFET exhibits very low RDS(on) in all packages.

Key Features

  • Order code VDS RDS(on) max. ID STL30P3LLH6 30 V 30 mΩ 9A.
  • Very low on-resistance.
  • Very low gate charge.
  • High avalanche ruggedness.
  • Low gate drive power loss PTOT 4.8 W.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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STL30P3LLH6 Datasheet P-channel 30 V, 24 mΩ typ., 9 A STripFET F6 DeepGATE Power MOSFET in a PowerFLAT 5x6 package PowerFLAT 5x6 D(5, 6, 7, 8) G(4) S(1, 2, 3) Features Order code VDS RDS(on) max. ID STL30P3LLH6 30 V 30 mΩ 9A • Very low on-resistance • Very low gate charge • High avalanche ruggedness • Low gate drive power loss PTOT 4.8 W Applications • Switching applications AM01475v4 Description This device is a P-channel Power MOSFET developed using the STripFET F6 technology, with a new trench gate structure. The resulting Power MOSFET exhibits very low RDS(on) in all packages.