STL3NM60N Datasheet | STMicroelectronics

N-channel 600 V, 1.5 Ω typ., 2.2 A MDmesh II Power MOSFET in a PowerFLAT 3.3x3.3 HV package 123 4 876 5 567 8 PowerFLAT 3.3x3.3 HV D(5, 6, 7, 8) G(4) S(1, 2, 3) AM15810v1 Features Order code RDS(on ) max. 600 V 1.8 Ω - 100% avalanche tested - Low input capacitance and gate charge - Low gate input resistance ID 2.2 A Applications - Switching applications Description This device is an N-channel Power MOSFET developed using the second generation of MDmesh technology. This revolutionary Power MOSFET associates a vertical structure to the pany’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore...