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STL3NM60N - N-channel Power MOSFET

General Description

This device is an N-channel Power MOSFET developed using the second generation of MDmesh technology.

This revolutionary Power MOSFET associates a vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge.

Key Features

  • Order code VDS RDS(on ) max. STL3NM60N 600 V 1.8 Ω.
  • 100% avalanche tested.
  • Low input capacitance and gate charge.
  • Low gate input resistance ID 2.2 A.

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The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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STL3NM60N Datasheet N-channel 600 V, 1.5 Ω typ., 2.2 A MDmesh II Power MOSFET in a PowerFLAT 3.3x3.3 HV package 123 4 876 5 567 8 PowerFLAT 3.3x3.3 HV D(5, 6, 7, 8) G(4) S(1, 2, 3) AM15810v1 Features Order code VDS RDS(on ) max. STL3NM60N 600 V 1.8 Ω • 100% avalanche tested • Low input capacitance and gate charge • Low gate input resistance ID 2.2 A Applications • Switching applications Description This device is an N-channel Power MOSFET developed using the second generation of MDmesh technology. This revolutionary Power MOSFET associates a vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters.