The following content is an automatically extracted verbatim text
from the original manufacturer datasheet and is provided for reference purposes only.
View original datasheet text
STL3NM60N
Datasheet
N-channel 600 V, 1.5 Ω typ., 2.2 A MDmesh II Power MOSFET in a PowerFLAT 3.3x3.3 HV package
123 4
876 5
567 8
PowerFLAT 3.3x3.3 HV
D(5, 6, 7, 8)
G(4) S(1, 2, 3)
AM15810v1
Features
Order code
VDS
RDS(on ) max.
STL3NM60N
600 V
1.8 Ω
• 100% avalanche tested • Low input capacitance and gate charge • Low gate input resistance
ID 2.2 A
Applications
• Switching applications
Description
This device is an N-channel Power MOSFET developed using the second generation of MDmesh technology. This revolutionary Power MOSFET associates a vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters.