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STL40C30H3LL - POWER MOSFET

Description

This device is a complementary N-channel and Pchannel Power MOSFET developed using STripFET™ V (P-channel) and STripFET™ VI DeepGATE™ (N-channel) technologies.

The resulting device exhibits low on-state resistance and an FOM among the lowest in its voltage class.

Table 1.

Features

  • 1 2 3 4 PowerFLAT™5x6 double island Figure 1. Internal schematic diagram Order code Channel VDS RDS(on) max ID N STL40C30H3LL P 0.021 Ω @ 10 V 10 A 30 V 0.03 Ω @ 10 V 8 A.
  • RDS(on).
  • Qg industry benchmark.
  • Extremely low on-resistance RDS(on).
  • High avalanche ruggedness.
  • Low gate drive power losses.

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Full PDF Text Transcription

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STL40C30H3LL N-channel 30 V, 0.019 Ω typ., 10 A, P-channel 30 V, 0.024 Ω typ.,8 A STripFET™ VI Power MOSFET in a PowerFLAT 5x6 d. i. package Datasheet - production data Features 1 2 3 4 PowerFLAT™5x6 double island Figure 1. Internal schematic diagram Order code Channel VDS RDS(on) max ID N STL40C30H3LL P 0.021 Ω @ 10 V 10 A 30 V 0.03 Ω @ 10 V 8 A • RDS(on) * Qg industry benchmark • Extremely low on-resistance RDS(on) • High avalanche ruggedness • Low gate drive power losses Applications • Switching applications Description This device is a complementary N-channel and Pchannel Power MOSFET developed using STripFET™ V (P-channel) and STripFET™ VI DeepGATE™ (N-channel) technologies.
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