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STL45N10F7AG - Automotive-grade N-channel Power MOSFET

Description

This N-channel Power MOSFET utilizes STripFET™ F7 technology with an enhanced trench gate structure that results in very low onstate resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching.

Features

  • Order code VDS RDS(on) max ID PTOT STL45N10F7AG 100 V 24 mΩ 18 A 72 W.
  • AEC-Q101 qualified.
  • Among the lowest RDS(on) on the market.
  • Excellent FoM (figure of merit).
  • Low Crss/Ciss ratio for EMI immunity.
  • High avalanche ruggedness.
  • Wettable flank package.

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Datasheet preview – STL45N10F7AG

Datasheet Details

Part number STL45N10F7AG
Manufacturer STMicroelectronics
File Size 937.82 KB
Description Automotive-grade N-channel Power MOSFET
Datasheet download datasheet STL45N10F7AG Datasheet
Additional preview pages of the STL45N10F7AG datasheet.

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Full PDF Text Transcription

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STL45N10F7AG Automotive-grade N-channel 100 V, 20 mΩ typ., 18 A, STripFET™ F7 Power MOSFET in a PowerFLAT™ 5x6 package Datasheet - production data Figure 1: Internal schematic diagram Features Order code VDS RDS(on) max ID PTOT STL45N10F7AG 100 V 24 mΩ 18 A 72 W  AEC-Q101 qualified  Among the lowest RDS(on) on the market  Excellent FoM (figure of merit)  Low Crss/Ciss ratio for EMI immunity  High avalanche ruggedness  Wettable flank package Applications  Switching applications Description This N-channel Power MOSFET utilizes STripFET™ F7 technology with an enhanced trench gate structure that results in very low onstate resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching.
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