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STL45P3LLH6 - P-CHANNEL POWER MOSFET

General Description

This device is a P-channel Power MOSFET developed using the STripFET™ H6 technology with a new trench gate structure.

The resulting Power MOSFET exhibits very low RDS(on) in all packages.

Key Features

  • Order code STL45P3LLH6 VDS -30 V RDS(on) max 13 mΩ ID -45 A.
  • Very low on-resistance.
  • Very low gate charge.
  • High avalanche ruggedness.
  • Low gate drive power loss.

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Full PDF Text Transcription for STL45P3LLH6 (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for STL45P3LLH6. For precise diagrams, and layout, please refer to the original PDF.

STL45P3LLH6 P-channel -30 V, 11 mΩ typ., -45 A STripFET™ H6 Power MOSFET in a PowerFLAT™ 5x6 package Datasheet - production data Figure 1: Internal schematic diagram Feat...

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Datasheet - production data Figure 1: Internal schematic diagram Features Order code STL45P3LLH6 VDS -30 V RDS(on) max 13 mΩ ID -45 A  Very low on-resistance  Very low gate charge  High avalanche ruggedness  Low gate drive power loss Applications  Switching applications Description This device is a P-channel Power MOSFET developed using the STripFET™ H6 technology with a new trench gate structure. The resulting Power MOSFET exhibits very low RDS(on) in all packages. Order code STL45P3LLH6 Table 1: Device summary Marking Package 45P3LLH6 PowerFLAT™ 5x6 Packing Tape and reel April 2016 DocID025822 Rev 1 This is informa

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