STL4P3LLH6 Datasheet | STMicroelectronics

P-channel 30 V, 48 mΩ typ., 4 A, STrip FET H6 Power MOSFET in a Power FLAT 2x2 package Features Order code RDS(on) max. 1 2 3 6 5 4 Power FLAT 2x2 30 V 56 mΩ 4A - Very low on-resistance - Very low gate charge - High avalanche ruggedness - Low gate drive power loss 1(D) 2(D) 3(G) Applications - Switching applications 6(D) 5(D) 4(S) Bottom view Description This device is a P-channel Power MOSFET developed using the STrip FET H6 technology with a new trench gate structure. The resulting Power MOSFET exhibits very low RDS(on) in all packages. AM11269v1 Product status link STL4P3LLH6 Product summary Order code Marking 4K3L Package Power FLAT 2x2 Packing Tape and...