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STL73D - High voltage fast-switching NPN power transistor

General Description

The device is manufactured using high voltage multi-epitaxial planar technology for high switching speeds and high voltage capability.

It uses a cellular emitter structure with planar edge termination to enhance switching speeds while maintaining the wide RBSOA.

Key Features

  • High voltage capability.
  • Low spread of dynamic parameters.
  • Very high switching speed.
  • Integrated antiparallel collector-emitter diode.

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Full PDF Text Transcription for STL73D (Reference)

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STL73D High voltage fast-switching NPN power transistor Features ■ High voltage capability ■ Low spread of dynamic parameters ■ Very high switching speed ■ Integrated ant...

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ead of dynamic parameters ■ Very high switching speed ■ Integrated antiparallel collector-emitter diode Application ■ Electronic ballast for fluorescent lighting Description The device is manufactured using high voltage multi-epitaxial planar technology for high switching speeds and high voltage capability. It uses a cellular emitter structure with planar edge termination to enhance switching speeds while maintaining the wide RBSOA. The STL series is designed for use in compact fluorescent lamps. TO-92 Figure 1. Internal schematic diagram Table 1. Device summary Order codes Marking (1) Package Packaging STL73D STL73D-AP L7