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STL75N8LF6 - N-CHANNEL POWER MOSFET

General Description

This device is an N-channel Power MOSFET developed using the 6th generation of STripFET™ DeepGATE™ technology, with a new gate structure.

The resulting Power MOSFET exhibits the lowest RDS(on) in all packages.

Figure 1.

Key Features

  • Order code STL75N8LF6 VDSS 80 V RDS(on) max < 7.4 mΩ ID 18 A (1) 1. The value is rated according Rthj-pcb.
  • RDS(on).
  • Qg industry benchmark.
  • Extremely low on-resistance RDS(on).
  • High avalanche ruggedness.
  • Low gate drive power losses.

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Full PDF Text Transcription for STL75N8LF6 (Reference)

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STL75N8LF6 N-channel 80 V, 5.6 mΩ, 18 A, PowerFLAT™ 5x6 STripFET™ VI DeepGATE™ Power MOSFET Features Order code STL75N8LF6 VDSS 80 V RDS(on) max < 7.4 mΩ ID 18 A (1) 1. T...

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Order code STL75N8LF6 VDSS 80 V RDS(on) max < 7.4 mΩ ID 18 A (1) 1. The value is rated according Rthj-pcb ■ RDS(on) * Qg industry benchmark ■ Extremely low on-resistance RDS(on) ■ High avalanche ruggedness ■ Low gate drive power losses Applications ■ Switching applications Description This device is an N-channel Power MOSFET developed using the 6th generation of STripFET™ DeepGATE™ technology, with a new gate structure. The resulting Power MOSFET exhibits the lowest RDS(on) in all packages. 1 2 3 4 PowerFLAT™ 5x6 Figure 1. Internal schematic diagram    $$$$ '333   "OTTOM6IEW   4OP6IEW !-6 Table 1.