This dual N-channel Power MOSFET utilizes STripFET™ F7 technology with an enhanced trench gate structure that results in very low onstate resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching.
Key Features
Order code STL76DN4LF7AG
VDS 40 V
RDS(on) max. 6 mΩ
ID 40 A.
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STL76DN4LF7AG Automotive-grade dual N-channel 40 V, 5 mΩ typ., 40 A STripFET™ F7 Power MOSFET in a PowerFLAT™ 5x6 DI Datasheet - production data Figure 1: Internal schema...
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owerFLAT™ 5x6 DI Datasheet - production data Figure 1: Internal schematic diagram Features Order code STL76DN4LF7AG VDS 40 V RDS(on) max. 6 mΩ ID 40 A AEC-Q101 qualified Among the lowest RDS(on) on the market Excellent FoM (figure of merit) Low Crss/Ciss ratio for EMI immunity High avalanche ruggedness Wettable flank package Applications Switching applications Description This dual N-channel Power MOSFET utilizes STripFET™ F7 technology with an enhanced trench gate structure that results in very low onstate resistance, while also reducing internal capacitance and gate charge for faster and more efficient swit
STL76DN4LF7AG Datasheet
