STL76DN4LF7AG Datasheet PDF - STMicroelectronics Dual N-channel Power MOSFET Specs

STL76DN4LF7AG - Dual N-channel Power MOSFET

Datasheet Summary

Description

This dual N-channel Power MOSFET utilizes STripFET™ F7 technology with an enhanced trench gate structure that results in very low onstate resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching.

Features

Order code STL76DN4LF7AG VDS 40 V RDS(on) max. 6 mΩ ID 40 A.
AEC-Q101 qualified.
Among the lowest RDS(on) on the market.
Excellent FoM (figure of merit).
Low Crss/Ciss ratio for EMI immunity.
High avalanche ruggedness.
Wettable flank package.

Datasheet Details

Part number	STL76DN4LF7AG
Manufacturer	STMicroelectronics
File Size	838.74 KB
Description	Dual N-channel Power MOSFET
Datasheet	STL76DN4LF7AG Datasheet
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Full PDF Text Transcription

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STL76DN4LF7AG Automotive-grade dual N-channel 40 V, 5 mΩ typ., 40 A STripFET™ F7 Power MOSFET in a PowerFLAT™ 5x6 DI Datasheet - production data Figure 1: Internal schematic diagram Features Order code STL76DN4LF7AG VDS 40 V RDS(on) max. 6 mΩ ID 40 A  AEC-Q101 qualified  Among the lowest RDS(on) on the market  Excellent FoM (figure of merit)  Low Crss/Ciss ratio for EMI immunity  High avalanche ruggedness  Wettable flank package Applications  Switching applications Description This dual N-channel Power MOSFET utilizes STripFET™ F7 technology with an enhanced trench gate structure that results in very low onstate resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching.

Published: Jan 21, 2019 |