STL7DN6LF3 Description
This device is a dual N-channel Power MOSFET developed using STripFET™ F3 technology. It is designed to minimize on-resistance and gate charge to provide superior switching performance. Top view Order code Table.
STL7DN6LF3 Key Features
- Designed for automotive application and AEC-Q101 qualified
- Logic level VGS(th)
- 175 °C junction temperature
- 100% avalanche rated
- Wettable flank package