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STLD125N4F6AG - N-channel Power MOSFET

Description

This device is an N-channel Power MOSFET developed using the STripFET™ F6 technology with a new trench gate structure.

The resulting Power MOSFET exhibits very low RDS(on) in all packages.

Features

  • Order code STLD125N4F6AG VDS 40 V RDS(on) max. 3.0 mΩ ID 120 A.
  • AEC-Q101 qualified.
  • Very low on-resistance.
  • Very low gate charge.
  • High avalanche ruggedness.
  • Low gate drive power loss.
  • Wettable flank package.

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Full PDF Text Transcription

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STLD125N4F6AG Automotive-grade N-channel 40 V, 2.4 mΩ typ., 120 A STripFET™ F6 Power MOSFET in a PowerFLAT™ 5x6 DSC Datasheet - production data Figure 1: Internal schematic diagram D(5, 6, 7, 8) G(4) Features Order code STLD125N4F6AG VDS 40 V RDS(on) max. 3.0 mΩ ID 120 A  AEC-Q101 qualified  Very low on-resistance  Very low gate charge  High avalanche ruggedness  Low gate drive power loss  Wettable flank package Applications  Switching applications Description This device is an N-channel Power MOSFET developed using the STripFET™ F6 technology with a new trench gate structure. The resulting Power MOSFET exhibits very low RDS(on) in all packages.
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