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STLD257N4F7AG - Automotive-grade N-channel Power MOSFET

Description

This N-channel Power MOSFET utilizes STripFET™ F7 technology with an enhanced trench gate structure that results in very low on-state resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching.

Features

  • Order code STLD257N4F7AG VDS 40 V RDS(on) max. 1.1 mΩ ID 120 A D(5, 6, 7, 8).
  • AEC-Q101 qualified.
  • Among the lowest RDS(on) on the market.
  • Excellent FoM (figure of merit).
  • Low Crss/Ciss ratio for EMI immunity.
  • High avalanche ruggedness.
  • Wettable flank package G(4).

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Full PDF Text Transcription

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STLD257N4F7AG Datasheet Automotive-grade N-channel 40 V, 0.82 mΩ typ., 120 A, STripFET™ F7 Power MOSFET in a PowerFLAT™ 5x6 DSC package Features Order code STLD257N4F7AG VDS 40 V RDS(on) max. 1.1 mΩ ID 120 A D(5, 6, 7, 8) • AEC-Q101 qualified • Among the lowest RDS(on) on the market • Excellent FoM (figure of merit) • Low Crss/Ciss ratio for EMI immunity • High avalanche ruggedness • Wettable flank package G(4) Applications • Switching applications S(1, 2, 3) AM15540v4 Description This N-channel Power MOSFET utilizes STripFET™ F7 technology with an enhanced trench gate structure that results in very low on-state resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching.
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