STP18N60DM2
STP18N60DM2 is N-channel Power MOSFET manufactured by STMicroelectronics.
N-channel 600 V, 0.260 Ω typ., 12 A MDMesh™ DM2 Power MOSFET in a TO-220 package
- production data
Figure 1: Internal schematic diagram D(2, TAB)
G(1)
Features
Order code STP18N60DM2
VDS 600 V
RDS(on) max. 0.295 Ω
ID 12 A
- Fast-recovery body diode
- Extremely low gate charge and input capacitance
- Low on-resistance
- 100% avalanche tested
- Extremely high dv/dt ruggedness
- Zener-protected
Applications
- Switching applications
Description
This high voltage N-channel Power MOSFET is part of the MDmesh™ DM2 fast recovery diode series. It offers very low recovery charge (Qrr) and time (trr) bined with low RDS(on), rendering it suitable for the most demanding...
