STP190N55LF3 Datasheet | STMicroelectronics

N-channel 55 V, 2.9 mΩ, 120 A, TO-220 STripFET™ Power MOSFET Features Type STP190N55LF3 VDSS 55 V RDS(on) max < 3.7 mΩ 120 A 312 W - Logic level drive - 100% avalanche tested Application - Switching applications - Automotive Description This n-channel enhancement mode Power MOSFET is the latest refinement of STMicroelectronics' unique “single feature size” strip-based process, which has decreased the critical alignment steps, offering remarkable manufacturing reproducibility. The oute is a transistor with extremely high packing density for low on resistance, rugged avalanche characteristics and low gate charge. 3 2 1 TO-220 Figure 1. Internal schematic...