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STP190N55LF3
N-channel 55 V, 2.9 mΩ, 120 A, TO-220 STripFET™ Power MOSFET
Features
Type STP190N55LF3
VDSS 55 V
RDS(on) max
ID
PD
< 3.7 mΩ 120 A 312 W
■ Logic level drive ■ 100% avalanche tested
Application
■ Switching applications – Automotive
Description
This n-channel enhancement mode Power MOSFET is the latest refinement of STMicroelectronics' unique “single feature size” strip-based process, which has decreased the critical alignment steps, offering remarkable manufacturing reproducibility. The outcome is a transistor with extremely high packing density for low on resistance, rugged avalanche characteristics and low gate charge.
3 2 1
TO-220
Figure 1. Internal schematic diagram
Table 1.
STP190N55LF3 Datasheet
