Datasheet Summary
N-channel 30 V, 2.15 mΩ typ., 120 A Power MOSFET in a TO-220 package
- production data
Figure 1: Internal schematic diagram
D(2, TAB)
Features
Order code VDS STP200N3LL 30 V
RDS(on) max.
2.4 mΩ
ID 120 A
PTOT 176.5 W
- Very low on-resistance
- Very low gate charge
- High avalanche ruggedness
- Low gate drive power loss
Applications
- Switching applications
Description
This device is an N-channel Power MOSFET with very low RDS(on) in all packages.
G(1)
S(3)
Order code STP200N3LL
AM01475v1_Tab
Table 1: Device summary
Marking
Package
200N3LL
TO-220
Packing Tube
July 2016
DocID028758 Rev...