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STP200N3LL - N-CHANNEL POWER MOSFET

General Description

This device is an N-channel Power MOSFET with very low RDS(on) in all packages.

This is information on a product in full production.

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Key Features

  • Order code VDS STP200N3LL 30 V RDS(on) max. 2.4 mΩ ID 120 A PTOT 176.5 W.
  • Very low on-resistance.
  • Very low gate charge.
  • High avalanche ruggedness.
  • Low gate drive power loss.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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STP200N3LL N-channel 30 V, 2.15 mΩ typ., 120 A Power MOSFET in a TO-220 package Datasheet - production data Figure 1: Internal schematic diagram D(2, TAB) Features Order code VDS STP200N3LL 30 V RDS(on) max. 2.4 mΩ ID 120 A PTOT 176.5 W  Very low on-resistance  Very low gate charge  High avalanche ruggedness  Low gate drive power loss Applications  Switching applications Description This device is an N-channel Power MOSFET with very low RDS(on) in all packages. G(1) S(3) Order code STP200N3LL AM01475v1_Tab Table 1: Device summary Marking Package 200N3LL TO-220 Packing Tube July 2016 DocID028758 Rev 2 This is information on a product in full production. 1/13 www.st.com Contents Contents STP200N3LL 1 Electrical ratings .............................................