Datasheet4U Logo Datasheet4U.com

STP21NM60N - N-CHANNEL MOSFET

Datasheet Summary

Description

ucThis series of devices implements the second dgeneration of MDmesh™ technology.

gate charge.

Features

  • Type VDSS (@Tjmax) RDS(on) max ID STB21NM60N )STB21NM60N-1 t(sSTF21NM60N cSTP21NM60N uSTW21NM60N 650 V 650 V 650 V 650 V 650 V < 0.22 Ω < 0.22 Ω < 0.22 Ω < 0.22 Ω < 0.22 Ω 17 A 17 A 17 A(1) 17 A 17 A rod1. Limited by maximum temperature allowed P.
  • 100% avalanche tested te.
  • Low input capacitance and gate charge le.
  • Low gate input resistance bso.

📥 Download Datasheet

Datasheet preview – STP21NM60N

Datasheet Details

Part number STP21NM60N
Manufacturer STMicroelectronics
File Size 498.94 KB
Description N-CHANNEL MOSFET
Datasheet download datasheet STP21NM60N Datasheet
Additional preview pages of the STP21NM60N datasheet.

📁 Similar Datasheet

  • STP21NM60ND - N-Channel MOSFET (INCHANGE)
  • STP21N05L - N - CHANNEL ENHANCEMENT MODE LOW THRESHOLD POWER MOS TRANSISTOR (ST Microelectronics)
  • STP21N05LFI - N - CHANNEL ENHANCEMENT MODE LOW THRESHOLD POWER MOS TRANSISTOR (ST Microelectronics)
  • STP21N06L - N - CHANNEL ENHANCEMENT MODE LOW THRESHOLD POWER MOS TRANSISTOR (ST Microelectronics)
  • STP21N06LFI - N - CHANNEL ENHANCEMENT MODE LOW THRESHOLD POWER MOS TRANSISTOR (ST Microelectronics)
  • STP21N65M5 - N-Channel MOSFET (INCHANGE)
  • STP210NF02 - N-CHANNEL POWER MOSFET (ST Microelectronics)
  • STP200N6F3 - 60V N-Channel Power MOSFET (ST Microelectronics)
  • STP200NF03 - N-CHANNEL POWER MOSFET (ST Microelectronics)
  • STP200NF04 - N-CHANNEL POWER MOSFET (ST Microelectronics)
Other Datasheets by STMicroelectronics

Full PDF Text Transcription

Click to expand full text
STP21NM60N-F21NM60N-STW21NM60N STB21NM60N-STB21NM60N-1 N-channel 600 V - 0.17 Ω - 17 A TO-220 - TO-220FP - D2PAK I2PAK - TO-247 second generation MDmesh™ Power MOSFET Features Type VDSS (@Tjmax) RDS(on) max ID STB21NM60N )STB21NM60N-1 t(sSTF21NM60N cSTP21NM60N uSTW21NM60N 650 V 650 V 650 V 650 V 650 V < 0.22 Ω < 0.22 Ω < 0.22 Ω < 0.22 Ω < 0.22 Ω 17 A 17 A 17 A(1) 17 A 17 A rod1. Limited by maximum temperature allowed P■ 100% avalanche tested te■ Low input capacitance and gate charge le■ Low gate input resistance bsoApplication - O■ Switching applications t(s)Description ucThis series of devices implements the second dgeneration of MDmesh™ technology.
Published: |