Datasheet4U Logo Datasheet4U.com

STP21NM60ND - N-Channel MOSFET

Datasheet Summary

Features

  • With TO-220 package.
  • Low input capacitance and gate charge.
  • Low gate input resistance.
  • 100% avalanche tested.
  • Minimum Lot-to-Lot variations for robust device performance and reliable operation.

📥 Download Datasheet

Datasheet preview – STP21NM60ND

Datasheet Details

Part number STP21NM60ND
Manufacturer INCHANGE
File Size 242.46 KB
Description N-Channel MOSFET
Datasheet download datasheet STP21NM60ND Datasheet
Additional preview pages of the STP21NM60ND datasheet.

📁 Similar Datasheet

  • STP21NM60ND - N-channel MOSFET (STMicroelectronics)
  • STP21NM60N - N-CHANNEL MOSFET (STMicroelectronics)
  • STP21NM50N - N-CHANNEL MOSFET (STMicroelectronics)
  • STP21N05L - N - CHANNEL ENHANCEMENT MODE LOW THRESHOLD POWER MOS TRANSISTOR (ST Microelectronics)
  • STP21N05LFI - N - CHANNEL ENHANCEMENT MODE LOW THRESHOLD POWER MOS TRANSISTOR (ST Microelectronics)
  • STP21N06L - N - CHANNEL ENHANCEMENT MODE LOW THRESHOLD POWER MOS TRANSISTOR (ST Microelectronics)
  • STP21N06LFI - N - CHANNEL ENHANCEMENT MODE LOW THRESHOLD POWER MOS TRANSISTOR (ST Microelectronics)
  • STP21N65M5 - N-CHANNEL MOSFET (STMicroelectronics)
  • STP21N90K5 - N-CHANNEL MOSFET (STMicroelectronics)
  • STP210NF02 - N-CHANNEL POWER MOSFET (ST Microelectronics)
Other Datasheets by INCHANGE

Full PDF Text Transcription

Click to expand full text
Isc N-Channel MOSFET Transistor INCHANGE Semiconductor STP21NM60ND ·FEATURES ·With TO-220 package ·Low input capacitance and gate charge ·Low gate input resistance ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Switching applications ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 600 V VGSS Gate-Source Voltage ±25 V ID Drain Current-Continuous@TC=25℃ TC=125℃ 17 10 A IDM Drain Current-Single Pulsed 68 A PD Total Dissipation @TC=25℃ 140 W Tch Max.
Published: |