Full PDF Text Transcription for STP21NM60ND (Reference)
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STP21NM60ND. For precise diagrams, and layout, please refer to the original PDF.
ow input capacitance and gate charge ·Low gate input resistance ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Switching applications ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 600 V VGSS Gate-Source Voltage ±25 V ID Drain Current-Continuous@TC=25℃ TC=125℃ 17 10 A IDM Drain Current-Single Pulsed 68 A PD Total Dissipation @TC=25℃ 140 W Tch Max.
STP21NM60ND Datasheet
