STP21NM60ND
STP21NM60ND is N-channel MOSFET manufactured by STMicroelectronics.
Features
Order codes
STB21NM60ND STF21NM60ND STP21NM60ND STW21NM60ND
VDSS @ TJmax
650 V 650 V 650 V 650 V
RDS(on) max
0.22 Ω 0.22 Ω 0.22 Ω 0.22 Ω
17 A 17 A 17 A 17 A
- Intrinsic fast-recovery body diode
- Worldwide best RDS(on)- area amongst the fast recovery diode devices
- 100% avalanche tested
- Low input capacitance and gate charge
- Low gate input resistance
- Extremely high dv/dt and avalanche capabilities
Applications
-
- Switching applications
Description
6 These FDmesh™ II Power MOSFETs with intrinsic fast-recovery body diode are produced
$0Y using the second generation of MDmesh™ technology. Utilizing a new strip-layout vertical structure, these revolutionary devices feature extremely low on-resistance and superior switching performance. They are ideal for bridge topologies and ZVS phase-shift converters.
Order codes STB21NM60ND STF21NM60ND STP21NM60ND STW21NM60ND
Table 1. Device summary
Marking
Package
21NM60ND 21NM60ND 21NM60ND 21NM60ND
D²PAK TO-220FP
TO-220 TO-247
Packaging Tape and reel
Tube Tube Tube
March 2013
This is information on a product in full production.
Doc ID13781 Rev 5
1/21
.st.
Contents
Contents
STB21NM60ND, STF21NM60ND, STP21NM60ND, STW21NM60ND
1 Electrical...
