Datasheet Details
| Part number | STP21NM60ND |
|---|---|
| Manufacturer | STMicroelectronics |
| File Size | 782.82 KB |
| Description | N-channel MOSFET |
| Datasheet |
 STP21NM60ND Datasheet
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General Description
using the second generation of MDmesh™ technology.
Key Features
- Order codes STB21NM60ND STF21NM60ND STP21NM60ND STW21NM60ND VDSS @ TJmax 650 V 650 V 650 V 650 V RDS(on) max 0.22 Ω 0.22 Ω 0.22 Ω 0.22 Ω ID 17 A 17 A 17 A 17 A.
- Intrinsic fast-recovery body diode.
- Worldwide best RDS(on).
- area amongst the fast recovery diode devices.
- 100% avalanche tested.
- Low input capacitance and gate charge.
- Low gate input resistance.
- Extremely high dv/dt and avalanche capabilities.
