STMicroelectronics STP25N06
N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR
APPLICATIONS
s HIGH CURRENT, HIGH SPEED SWITCHING s SOLENOID AND RELAY DRIVERS s REGULATORS INTERNAL SCHEMATIC DIAGRAM s DC-DC & DC-AC CONVERTERS DataSheet4U.com s MOTOR CONTROL, AUDIO AMPLIFIERS s AUTOMOTIVE ENVIRONMENT (INJECTION, ABS, AIR-BAG, LAMPDRIVERS, Etc.) DataSheeABSOLUTE MAXIMUM RATINGS
Symbol Parameter STP25N06 VD S V DG R V GS ID ID ID M(●) P tot V ISO T stg Tj Drain-source Voltage (V GS = 0) Drain- gate Voltage (R GS = 20 kΩ ) Gate-source Voltage Drain Current (continuous) at T c = 25 C Drain Current (continuous) at T c = 100 oC Drain Current (pulsed) Total Dissipation at Tc = 25 C Derating Factor Insulation Withstand Voltage (DC) Storage Temperature Max. Operating Junction Temperature o o Value STP25N06FI 60 60 ± 20 25 17 100 90 0.6 -65 to 175 175 16 11 100 40 0.27 2000 Unit V V V A A A W W/o C V o o C C (●) Pulse width limited by safe operating area December 1996 1/10 DataSheet4U.com DataSheet4U.com DataSheet 4 U .com STP25N06/FI THERMAL DATA TO-220 R thj-cas e Rthj...