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STP2N105K5 - N-channel Power MOSFET

Datasheet Summary

Description

These very high voltage N-channel Power MOSFETs are designed using MDmesh™ K5 technology based on an innovative proprietary vertical structure.

The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high efficiency.

Features

  • Order codes VDS RDS(on) max STD2N105K5 STP2N105K5 1050 V 8Ω STU2N105K5 ID 1.5 A PTOT 60 W.
  • Industry’s lowest RDS(on) x area.
  • Industry’s best figure of merit (FoM).
  • Ultra low gate charge.
  • 100% avalanche tested.
  • Zener-protected.

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Datasheet preview – STP2N105K5

Datasheet Details

Part number STP2N105K5
Manufacturer STMicroelectronics
File Size 1.07 MB
Description N-channel Power MOSFET
Datasheet download datasheet STP2N105K5 Datasheet
Additional preview pages of the STP2N105K5 datasheet.

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Full PDF Text Transcription

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STD2N105K5, STP2N105K5, STU2N105K5 N-channel 1050 V, 6 Ω typ., 1.5 A MDmesh™ K5 Power MOSFETs in DPAK, TO-220 and IPAK packages Datasheet - production data TAB 3 1 DPAK TAB TAB 3 2 1 TO-220 IPAK 3 2 1 Figure 1. Internal schematic diagram ' 7$% Features Order codes VDS RDS(on) max STD2N105K5 STP2N105K5 1050 V 8Ω STU2N105K5 ID 1.5 A PTOT 60 W • Industry’s lowest RDS(on) x area • Industry’s best figure of merit (FoM) • Ultra low gate charge • 100% avalanche tested • Zener-protected Applications • Switching applications *  6  AM01476v1 Description These very high voltage N-channel Power MOSFETs are designed using MDmesh™ K5 technology based on an innovative proprietary vertical structure.
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