STMicroelectronics STP30NM60ND
N-channel MOSFET
| Part No. | STP30NM60ND |
|---|---|
| Datasheet | STP30NM60ND Download |
| Manufacturer |  STMicroelectronics |
| Description | N-channel MOSFET |
| Buy | Stock & Price |
FEATURES
Type VDSS @TJ max RDS(on) max ID STB30NM60ND )STI30NM60ND t(sSTF30NM60ND cSTP30NM60ND uSTW30NM60ND 650 V 0.13 Ω 25 A 25 A 25 A(1) 25 A 25 A rod1. Limited only by maximum temperature allowed P● The world’s best RDS(on) in TO-220 amongst tethe fast recovery diode devices le● 100% avalanche tested o● Low input capacitance and gate charge bs● Low gate input resistance O● Extremely high dv/dt and avalanche -capabilities ct(s)Application du● Switching applications ProDescription teThe FDmesh™ II series belongs to the second legeneration of MDmesh™ technology. This orevolutionary Power MOSFET associates a new svertical structure to the company's strip layout band associates all advantages of reduced onOresistance and fast switching with an intrinsic fast- I2PAK 123 TO-247 3 2 1 3 D2PAK 1 TO-220 3 2 1 3 2 TO-220FP 1 Figure 1. Internal schematic diagram $ ' 3 !- V It is therefore strongly recommended for bridge recovery body diode. topologies, in particular ZVS phase-shift converters. Table 1.
