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STP30NM60ND Datasheet N-channel MOSFET

Manufacturer: STMicroelectronics

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General Description

teThe FDmesh™ II series belongs to the second legeneration of MDmesh™ technology.

This orevolutionary Power MOSFET associates a new svertical structure to the company's strip layout band associates all advantages of reduced onOresistance and fast switching with an intrinsic fast- I2PAK 123 TO-247 3 2 1 3 D2PAK 1 TO-220 3 2 1 3 2 TO-220FP 1 Figure 1.

Internal schematic diagram $ ' 3 !-V It is therefore strongly recommended for bridge recovery body diode.

Overview

STx30NM60ND N-channel 600 V, 0.11 Ω, 25 A FDmesh™ II Power MOSFET (with fast diode) TO-220, TO-220FP, D2PAK, I2PAK,.

Key Features

  • Type VDSS @TJ max RDS(on) max ID STB30NM60ND )STI30NM60ND t(sSTF30NM60ND cSTP30NM60ND uSTW30NM60ND 650 V 0.13 Ω 25 A 25 A 25 A(1) 25 A 25 A rod1. Limited only by maximum temperature allowed P.
  • The world’s best RDS(on) in TO-220 amongst tethe fast recovery diode devices le.
  • 100% avalanche tested o.
  • Low input capacitance and gate charge bs.
  • Low gate input resistance O.
  • Extremely high dv/dt and avalanche -capabilities ct(s).

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