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STP35N60DM2 - N-channel Power MOSFET

Description

This high voltage N-channel Power MOSFET is part of the MDmesh™ DM2 fast recovery diode series.

Features

  • Order code VDS STP35N60DM2 600 V RDS(on) max. 0.110 Ω ID PTOT 28 A 210 W.
  • Fast-recovery body diode.
  • Extremely low gate charge and input capacitance.
  • Low on-resistance.
  • 100% avalanche tested.
  • Extremely high dv/dt ruggedness.
  • Zener-protected.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (STP35N60DM2-STMicroelectronics.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number STP35N60DM2
Manufacturer STMicroelectronics
File Size 594.06 KB
Description N-channel Power MOSFET
Datasheet download datasheet STP35N60DM2 Datasheet
Additional preview pages of the STP35N60DM2 datasheet.

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Full PDF Text Transcription

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STP35N60DM2 N-channel 600 V, 0.094 Ω typ., 28 A MDmesh™ DM2 Power MOSFET in a TO-220 package Datasheet - production data Figure 1: Internal schematic diagram Features Order code VDS STP35N60DM2 600 V RDS(on) max. 0.110 Ω ID PTOT 28 A 210 W  Fast-recovery body diode  Extremely low gate charge and input capacitance  Low on-resistance  100% avalanche tested  Extremely high dv/dt ruggedness  Zener-protected Applications  Switching applications Description This high voltage N-channel Power MOSFET is part of the MDmesh™ DM2 fast recovery diode series. It offers very low recovery charge (Qrr) and time (trr) combined with low RDS(on), rendering it suitable for the most demanding high efficiency converters and ideal for bridge topologies and ZVS phase-shift converters.
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