STP3LN80K5 Datasheet | STMicroelectronics

STP3LN80K5, STU3LN80K5 N-channel 800 V, 2.75 Ω typ., 2 A MDmesh™ K5 Power MOSFET in TO-220 and IPAK packages - production data TO-220 3 2 1 IPAK Figure 1: Internal schematic diagram D(2, TAB) G(1) Features Order code STP3LN80K5 STU3LN80K5 V DS 800 V RDS(on) max 3.25 Ω ID 2A - Industry’s lowest RDS(on) x area - Industry’s best Fo M (figure of merit) - Ultra-low gate charge - 100% avalanche tested - Zener-protected Applications - Switching applications Description These very high voltage N-channel Power MOSFET are designed using MDmesh™ K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high efficiency. S(3) Order code STP3LN80K5 STU3LN80K5 AM01476v1 Table 1: Device summary Marking Package 3LN80K5 TO-220...