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STP400N4F6 - N-channel Power MOSFET

General Description

These devices are N-channel Power MOSFETs developed using the 6th generation of STripFET™ DeepGATE™ technology, with a new gate structure.

The resulting Power MOSFETs exhibits the lowest RDS(on) in all packages.

Figure 1.

Key Features

  • N-channel 40 V, 120 A STripFET™ VI DeepGATE™ Power MOSFET in I²PAK and TO-220 packages Datasheet.
  • preliminary data Order codes STI400N4F6 STP400N4F6 VDSS 40 V RDS(on) max ID < 1.7 mΩ 120 A(1) 1. Limited by package.
  • Low gate charge.
  • Very low on-resistance.
  • High avalanche ruggedness.

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STI400N4F6, STP400N4F6 Features N-channel 40 V, 120 A STripFET™ VI DeepGATE™ Power MOSFET in I²PAK and TO-220 packages Datasheet − preliminary data Order codes STI400N4F6 STP400N4F6 VDSS 40 V RDS(on) max ID < 1.7 mΩ 120 A(1) 1. Limited by package ■ Low gate charge ■ Very low on-resistance ■ High avalanche ruggedness Applications ■ Switching applications Description These devices are N-channel Power MOSFETs developed using the 6th generation of STripFET™ DeepGATE™ technology, with a new gate structure. The resulting Power MOSFETs exhibits the lowest RDS(on) in all packages. TAB TAB 123 I²PAK 3 2 1 TO-220 Figure 1. Internal schematic diagram $ 4!" ' 3 !-V Table 1.