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STP40NS15 - N-CHANNEL MOSFET

Description

This powermos MOSFET is designed using the company’s consolidated strip layout-based MESH OVERLAY™ process.

This technology matches and improves the performances compared with standard parts from various sources.

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Full PDF Text Transcription

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N-CHANNEL 150V - 0.042Ω - 40A TO-220 MESH OVERLAY™ MOSFET PRELIMINARY DATA TYPE STP40NS15 s s s s STP40NS15 VDSS 150 V RDS(on) <0.052Ω ID 40A TYPICAL RDS(on) = 0.042Ω EXTREMELY HIGH dv/dt CAPABILITY VERY LOW INTRINSIC CAPACITANCES GATE CHARGE MINIMIZED 3 1 2 DESCRIPTION This powermos MOSFET is designed using the company’s consolidated strip layout-based MESH OVERLAY™ process. This technology matches and improves the performances compared with standard parts from various sources.
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