Datasheet4U Logo Datasheet4U.com

STP5N120 - N-Channel Power MOSFET

General Description

strip-based PowerMESH™ layout.

ucpushing on-resistance significantly down, special dcare is taken to ensure a very good dv/dt rocapability for the most demanding applications.

Key Features

  • Type VDSS RDS(on) ID PW STP5N120 1200 V < 3.5 Ω 4.7 A 160 W t(s).
  • 100% avalanche tested.
  • Extremely high dv/dt capability uc.
  • ESD improved capability rod.
  • New high voltage benchmark.
  • Gate charge minimized lete P.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
STP5N60 N-Channel Enhancement Mode Power MOS Transistor ST Microelectronics
STP5N60FI N-Channel Enhancement Mode Power MOS Transistor ST Microelectronics
STP5N80 N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS ST Microelectronics
STP5N80FI N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS ST Microelectronics
STP5NA50 N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR ST Microelectronics

Other Datasheets by STMicroelectronics

Part Number Description
STP5N105K5 N-channel Power MOSFET
STP5N60M2 N-channel Power MOSFET
STP5N62K3 N-channel MOSFET
STP5N80K5 N-channel Power MOSFET
STP5N90 N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
STP5N120 N-channel 1200 V, 2.7 Ω, 4.7 A TO-220 Zener-protected SuperMESH™ Power MOSFET Features Type VDSS RDS(on) ID PW STP5N120 1200 V < 3.5 Ω 4.7 A 160 W t(s)■ 100% avalanche tested ■ Extremely high dv/dt capability uc■ ESD improved capability rod■ New high voltage benchmark ■ Gate charge minimized lete PApplication o■ Switching applications ObsDescription ) -The SuperMESH™ series is obtained through an t(sextreme optimization of ST’s well established strip-based PowerMESH™ layout. In addition to ucpushing on-resistance significantly down, special dcare is taken to ensure a very good dv/dt rocapability for the most demanding applications. PSuch series complements ST full range of high Obsoletevoltage Power MOSFETs. 3 2 1 TO-220 Figure 1. Internal schematic diagram Table 1.