Datasheet Summary
®
STP5NB100 STP5NB100FP
- CHANNEL 1000V
- 2.4Ω
- 5A
- TO-220/TO-220FP PowerMESH™ MOSFET
T YPE STP5NB100 STP5NB100F P
ν ν ν ν ν
V DSS 1000 V 1000 V
R DS(on) < 2.7 Ω < 2.7 Ω
ID 5 A 5 A
TYPICAL RDS(on) = 2.4 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED VERY LOW INTRINSIC CAPACITANCES GATE CHARGE MINIMIZED
3 2
3 1 2
DESCRIPTION Using the latest high voltage MESH OVERLAY™ process, STMicroelectronics has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the pany’s proprietary edge termination structure, gives the lowest RDS(on) per area, exceptional avalanche and dv/dt capabilities and...