Description
This N-channel Power MOSFET is based on the most innovative super-junction MDmesh DM9 technology, suitable for medium/high voltage MOSFETs featuring very low RDS(on) per area coupled with a fast-recovery diode.
Features
- Order code
VDS
RDS(on) max. ID
STP60N043DM9
600 V
43 mΩ
56 A.
- Fast-recovery body diode.
- Worldwide best RDS(on) per area among silicon-based fast recovery devices.
- Low gate charge, input capacitance and resistance.
- 100% avalanche tested.
- Extremely high dv/dt ruggedness.
STP60N043DM9 Datasheet
