STP60N043DM9 Datasheet N-channel Power MOSFET

Manufacturer: STMicroelectronics

Overview: STP60N043DM9 Datasheet N-channel 600 V, 38 mΩ typ., 56 A MDmesh DM9 Power MOSFET in a TO-220 package TAB TO-220 1 23 D(2, TAB) G(1) S(3).

Datasheet Details

Part number	STP60N043DM9
Manufacturer	STMicroelectronics
File Size	224.71 KB
Description	N-CHANNEL Power MOSFET
Datasheet	STP60N043DM9-STMicroelectronics.pdf

General Description

This N-channel Power MOSFET is based on the most innovative super-junction MDmesh DM9 technology, suitable for medium/high voltage MOSFETs featuring very low RDS(on) per area coupled with a fast-recovery diode.

The silicon-based DM9 technology benefits from a multi-drain manufacturing process which allows an enhanced device structure.

The fast-recovery diode featuring very low recovery charge (Qrr), time (trr) and RDS(on) makes this fast-switching super-junction Power MOSFET tailored for the most demanding high-efficiency bridge topologies and ZVS phase-shift converters.

Key Features

Order code VDS RDS(on) max. ID STP60N043DM9 600 V 43 mΩ 56 A.
Fast-recovery body diode.
Worldwide best RDS(on) per area among silicon-based fast recovery devices.
Low gate charge, input capacitance and resistance.
100% avalanche tested.
Extremely high dv/dt ruggedness.

STP60N043DM9 Distributor

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