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STP60N043DM9 - N-CHANNEL Power MOSFET

General Description

This N-channel Power MOSFET is based on the most innovative super-junction MDmesh DM9 technology, suitable for medium/high voltage MOSFETs featuring very low RDS(on) per area coupled with a fast-recovery diode.

Key Features

  • Order code VDS RDS(on) max. ID STP60N043DM9 600 V 43 mΩ 56 A.
  • Fast-recovery body diode.
  • Worldwide best RDS(on) per area among silicon-based fast recovery devices.
  • Low gate charge, input capacitance and resistance.
  • 100% avalanche tested.
  • Extremely high dv/dt ruggedness.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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STP60N043DM9 Datasheet N-channel 600 V, 38 mΩ typ., 56 A MDmesh DM9 Power MOSFET in a TO-220 package TAB TO-220 1 23 D(2, TAB) G(1) S(3) AM01475v1_noZen Features Order code VDS RDS(on) max. ID STP60N043DM9 600 V 43 mΩ 56 A • Fast-recovery body diode • Worldwide best RDS(on) per area among silicon-based fast recovery devices • Low gate charge, input capacitance and resistance • 100% avalanche tested • Extremely high dv/dt ruggedness Applications • Power supplies and converters • LLC resonant converter Description This N-channel Power MOSFET is based on the most innovative super-junction MDmesh DM9 technology, suitable for medium/high voltage MOSFETs featuring very low RDS(on) per area coupled with a fast-recovery diode.