STP65N045M9 Datasheet | STMicroelectronics

N-channel 650 V, 39 mΩ typ., 54 A MDmesh M9 Power MOSFET in a TO-220 package Features TO-220 1 23 D(2, TAB) Order code RDS(on) max. 650 V 45 mΩ 54A - Worldwide best FOM RDS(on)- Qg among silicon-based devices - Higher VDSS rating - Higher dv/dt capability - Excellent switching performance - Easy to drive - 100% avalanche tested Applications G(1) - High efficiency switching applications Description S(3) AM01475v1_noZen This N-channel Power MOSFET is based on the most innovative super-junction MDmesh M9 technology, suitable for medium/high voltage MOSFETs featuring very low RDS(on) per area. The silicon based M9...