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STP6NA80FI - N-CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR

Download the STP6NA80FI datasheet PDF. This datasheet also covers the STP6NA80 variant, as both devices belong to the same n-channel enhancement mode fast power mos transistor family and are provided as variant models within a single manufacturer datasheet.

General Description

This series of POWER MOSFETS represents the most advanced high voltage technology.

The optimized cell layout coupled with a new proprietary edge termination concur to give the device low RDS(on) and gate charge, unequalled ruggedness and superior switching performance.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (STP6NA80_STMicroelectronics.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

Part Number Description Manufacturer
STP6NA60 N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR ST Microelectronics
STP6NA60FI N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR ST Microelectronics
STP6NA60FP N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR ST Microelectronics
STP6N25 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS ST Microelectronics
STP6N25FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS ST Microelectronics

Other Datasheets by STMicroelectronics

Part Number Description
STP6NA80 N-CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR
STP6N120K3 N-channel MOSFET
STP6N50 N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR
STP6N50FI N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR
STP6N60M2 N-channel Power MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
STP6NA80 STP6NA80FI N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR TYPE STP6NA80 STP6NA80FI www.DataSheet4U.com s s s s s s s V DSS 800 V 800 V R DS( on) < 1.9 Ω < 1.9 Ω ID 5.7 A 3.4 A TYPICAL RDS(on) = 1.68 Ω ± 30V GATE TO SOURCE VOLTAGE RATING 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC LOW INTRINSIC CAPACITANCES GATE GHARGE MINIMIZED REDUCED THRESHOLD VOLTAGE SPREAD TO-220 3 1 2 1 2 3 DESCRIPTION This series of POWER MOSFETS represents the most advanced high voltage technology. The optimized cell layout coupled with a new proprietary edge termination concur to give the device low RDS(on) and gate charge, unequalled ruggedness and superior switching performance.