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STP7NM60N - N-channel Power MOSFET

General Description

This device is an N-channel Power MOSFET developed using the second generation of MDmesh™ technology.

This revolutionary Power MOSFET associates a vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge.

Key Features

  • TAB Order code VDS RDS(on) max. ID Package uct(s) TO-220 1 23 STP7NM60N 600 V 0.9 Ω.
  • 100% avalanche tested.
  • Low input capacitance and gate charge.
  • Low gate input resistance 5A TO-220 Prod D(2, TAB).

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The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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STP7NM60N Datasheet N-channel 600 V, 0.8 Ω typ., 5 A MDmesh™ II Power MOSFET in a TO‑220 package Features TAB Order code VDS RDS(on) max. ID Package uct(s) TO-220 1 23 STP7NM60N 600 V 0.9 Ω • 100% avalanche tested • Low input capacitance and gate charge • Low gate input resistance 5A TO-220 Prod D(2, TAB) Applications • Switching applications solete G(1) t(s) - Ob S(3) AM01475v1_noZen Description This device is an N-channel Power MOSFET developed using the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters.