Datasheet Summary
N-channel 900 V, 0.60 Ω typ., 8 A MDmesh™ K5 Power MOSFET in a TO-220 package
- production data
TO-220
1 23
Figure 1: Internal schematic diagram
Features
Order code STP8N90K5
VDS 900 V
RDS(on) max. 0.68 Ω
ID 8A
- Industry’s lowest RDS(on) x area
- Industry’s best FoM (figure of merit)
- Ultra-low gate charge
- 100% avalanche tested
- Zener-protected
Applications
- Switching applications
Description
This very high voltage N-channel Power MOSFET is designed using MDmesh™ K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power...