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STP8NM60D - N-CHANNEL Power MOSFET

General Description

The FDmesh™ associates all advantages of reduced on-resistance and fast switching with an intrinsic fast-recovery body diode.

Key Features

  • Type STB8NM60D STP8NM60D.
  • VDSS 600V 600V RDS(on) < 1.0Ω < 1.0Ω ID 8A 8A PTOT 100W 100W 3 1 2 High dv/dt and avalanche capabilities 100% avalanche rated Low input capacitance and gate charge Low gate input resistance Fast internal recovery diode TO-220 3 1 D²PAK.

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The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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STB8NM60D STP8NM60D N-CHANNEL 600V - 0.9Ω - 8A - TO-220/D2PAK Fast Diode MDmesh™ Power MOSFET General features Type STB8NM60D STP8NM60D ■ ■ ■ ■ ■ VDSS 600V 600V RDS(on) < 1.0Ω < 1.0Ω ID 8A 8A PTOT 100W 100W 3 1 2 High dv/dt and avalanche capabilities 100% avalanche rated Low input capacitance and gate charge Low gate input resistance Fast internal recovery diode TO-220 3 1 D²PAK Description The FDmesh™ associates all advantages of reduced on-resistance and fast switching with an intrinsic fast-recovery body diode.