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STP8NM60FP - N-CHANNEL MOSFET

Download the STP8NM60FP datasheet PDF. This datasheet also covers the STP8NM60 variant, as both devices belong to the same n-channel mosfet family and are provided as variant models within a single manufacturer datasheet.

General Description

The MDmesh™ is a new revolutionary MOSFET technology that associates the Multiple Drain process with the Company’s PowerMESH™ horizontal layout.

The resulting product has an outstanding low on-resistance, impressively high dv/dt and excellent avalanche characteristics.

Key Features

  • TYPE STP8NM60 STP8NM60FP STD5NM60 STD5NM60-1 STB8NM60 s s s s Figure 1: Package ID 8A 8 A(.
  • ) 5A 5A 5A Pw 100 W 30 W 96 W 96 W 96 W 1Ω 1Ω 1Ω 1Ω 1Ω VDSS 650 V 650 V 650 V 650 V 650 V RDS(on) < < < < < 3 1 2 s.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (STP8NM60_STMicroelectronics.pdf) that lists specifications for multiple related part numbers.

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
STP8NM60 - STP8NM60FP STB8NM60 - STD5NM60 - STD5NM60-1 N-CHANNEL 650V@Tjmax-0.9Ω-8A TO-220/FP/D/IPAK/D²PAK STripFET™ II MOSFET Table 1: General Features TYPE STP8NM60 STP8NM60FP STD5NM60 STD5NM60-1 STB8NM60 s s s s Figure 1: Package ID 8A 8 A(*) 5A 5A 5A Pw 100 W 30 W 96 W 96 W 96 W 1Ω 1Ω 1Ω 1Ω 1Ω VDSS 650 V 650 V 650 V 650 V 650 V RDS(on) < < < < < 3 1 2 s TYPICAL RDS(on) = 0.9 Ω HIGH dv/dt AND AVALANCHE CAPABILITIES 100% AVALANCHE TESTED LOW INPUT CAPACITANCE AND GATE CHARGE LOW GATE INPUT RESISTANCE TO-220 3 1 TO-220FP D²PAK 3 1 1 3 2 DPAK DESCRIPTION The MDmesh™ is a new revolutionary MOSFET technology that associates the Multiple Drain process with the Company’s PowerMESH™ horizontal layout.