STP8NM60FP Datasheet and Specifications PDF

The MDmesh™ is a new revolutionary MOSFET technology that associates the Multiple Drain process with the Company’s PowerMESH™ horizontal layout. The resulting product has an outstanding low on-resista.

TYPE STP8NM60 STP8NM60FP STD5NM60 STD5NM60-1 STB8NM60 s s s s Figure 1: Package ID 8A 8 A(*) 5A 5A 5A Pw 100 W 30 W 96 W 96 W 96 W 1Ω 1Ω 1Ω 1Ω 1Ω VDSS 650 V 650 V 650 V 650 V 650 V RDS(on) < < < < < 3 1 2 s TYPICAL RDS(on) = 0.9 Ω HIGH dv/dt AND AVALANCHE CAPABILITIES 100% AVALANCHE TESTED LOW.

isc N-Channel MOSFET Transistor STP8NM60FP FEATURES ·Drain Current –ID= 8A@ TC=25℃ ·Drain Source Voltage- : VDSS= 600V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 1Ω(Max) ·100% avalanche tes.

*Drain Current
*ID= 8A@ TC=25℃
*Drain Source Voltage- : VDSS= 600V(Min)
*Static Drain-Source On-Resistance : RDS(on) = 1Ω(Max)
*100% avalanche tested
*Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS
*Switching application ABSOLUTE MAXIMUM RATINGS(Ta=.