STPSC806 Description
The SiC diode is an ultrahigh performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide bandgap material allows the design of a Schottky diode structure with a 600 V rating.
- Part: STPSC806
- Manufacturer: STMicroelectronics (official site)
- Size: 110.59 KB
Equivalent or Similar Parts
| Manufacturer | Part Number | Description |
|---|---|---|
STMicroelectronics |
STPSC806D | 600 V power Schottky silicon carbide diode |