STMicroelectronics STPSC806
The SiC diode is an ultrahigh performance power Schottky diode. It is manufactured using a silicon carbide substrate.| Part No. | STPSC806 |
|---|---|
| Datasheet | STPSC806 Download |
| Manufacturer |  STMicroelectronics |
| Description | Schottky Barrier 600 V power Schottky silicon carbide diode |
| Buy | Stock & Price |
FEATURES
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● No or negligible reverse recovery Switching behavior independent of temperature Particularly suitable in PFC boost diode function A K
DESCRIPTION
The wide bandgap material allows the design of a Schottky diode structure with a 600 V rating. Due to the Schottky construction no recovery is shown at turn-off and ringing patterns are negligible. The minimal capacitive turn-off behavior is independent of temperature. ST SiC diodes will boost the performance of PFC operations in hard switching conditions. Table 1. TO-220AC STPSC806D Device summary IF(AV) VRRM Tj (max) QC (typ) 8A 600 V 175 °C 10 nC September 2009 Doc ID 16286 Rev 1 1/7 7 Characteristics STPSC806 1 Characteristics Table 2. Symbol VRRM IF(RMS) IF(AV) IFSM IFRM Tstg Tj Absolute ratings (limiting values at 25 °C unless otherwise specified) Parameter Repetitive peak reverse voltage Forward rms current Average forward current Surge non repetitive forward current Tc = 115 °C, δ = 0.5 tp = 10 ms sinusoidal, Tc = 25 °C...
