Datasheet Summary
P-channel -30 V, 10 mΩ typ., -12.5 A, STripFET H6 Power MOSFET in an SO-8 package
5 8
4 1 SO-8
D(5, 6, 7, 8)
G(4)
S(1, 2, 3)
AM01475v4
Features
Order code
-30 V
- Very low on-resistance
- Very low gate charge
- High avalanche ruggedness
- Low gate drive power loss
RDS(on) max. 12 mΩ
ID -12.5 A
Applications
- Switching applications
Description
This device is a P-channel Power MOSFET developed using the STripFET H6 technology with a new trench gate structure. The resulting Power MOSFET exhibits very low RDS(on) in all packages.
Product status link STS10P3LLH6
Product summary
Order code
Marking
10K3L
Package
SO-8
Packing...