STS10P3LLH6
Overview
- Very low on-resistance
- Very low gate charge
- High avalanche ruggedness
- Low gate drive power loss RDS(on) max. 12 mΩ ID -12.5 A
| Part | STS10P3LLH6 |
|---|---|
| Description | P-channel Power MOSFET |
| Category | MOSFET |
| Manufacturer | STMicroelectronics |
| Size | 281.69 KB |
Related Datasheets
| Part Number | Manufacturer | Description |
|---|---|---|
| AP9563GH | Advanced Power Electronics Corp | P-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| FCPF360N65S3R0L | onsemi | N-Channel MOSFET |
| A2SHB | HAOHAI | N-Channel MOSFET |