STS6P3LLH6 Key Features
- Very low on-resistance
- Very low gate charge
- High avalanche ruggedness
- Low gate drive power loss
- Part: STS6P3LLH6
- Manufacturer: STMicroelectronics (official site)
- Size: 301.35 KB
Related STMicroelectronics Datasheets
| Part Number | Description |
|---|---|
| STS6PF30L | P-CHANNEL POWER MOSFET |
| STS6DNF30L | DUAL N - CHANNEL POWER MOSFET |
| STS6DNF30V | DUAL N - CHANNEL POWER MOSFET |
| STS6NF20V | N-CHANNEL POWER MOSFET |
| STS10P3LLH6 | P-channel Power MOSFET |
STS6P3LLH6 Description
This device is a P-channel Power MOSFET developed using the STripFET H6 technology with a new trench gate structure. The resulting Power MOSFET exhibits very low RDS(on) in all packages. STS6P3LLH6 Electrical ratings Electrical ratings Table.