STS7P4LLF6 Description
This device is a P-channel Power MOSFET developed using the STripFET F6 technology, with a new trench gate structure. The resulting Power MOSFET exhibits very low RDS(on) in all packages. Product status link STS7P4LLF6 Product summary Order code STS7P4LLF6 Marking 7K4L Package SO-8 Packing Tape and reel Note:.
STS7P4LLF6 Key Features
- Very low on-resistance
- Very low gate charge
- High avalanche ruggedness
- Low gate drive power loss