STTH12T06 Description
This device is part of ST's second generation of 600 V tandem diodes. It has ultralow switchinglosses with a minimized QRR (6.5 nC) that makes it perfect for use in circuits working in hardswitching mode. In particular the VF/QRR trade-off positions this device between standard ultrafast diodes and silicon-carbide Schottky rectifiers in terms of price/performance ratio.
STTH12T06 Key Features
- High voltage rectifier
- Tandem diodes in series
- Very low switching losses
- Insulated device with internal ceramic
- Equal thermal conditions for both 300 V diodes
- Static and dynamic equilibrium of internal diodes are warranted by design
- Insulated package
- Capacitance: 7 pF
- Insulated voltage: 2500 V rms