STMicroelectronics STU10NM60N
This device is an N-channel Power MOSFET developed using the second generation of MDmesh technology. This revolutionary Power MOSFET associates a vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge.| Part No. | STU10NM60N |
|---|---|
| Datasheet | STU10NM60N Download |
| Manufacturer |  STMicroelectronics |
| Description | N-Channel Power MOSFET |
| Buy | Stock & Price |
FEATURES
TAB Order code VDS RDS(on) max. ID STU10NM60N 600 V 550 mΩ 10 A 3 2 1● 100% avalanche tested
● Low input capacitance and gate charge IPAK
● Low gate input resistance D(2, TAB)
APPLICATIONS
● Switching applications G(1) S(3)DESCRIPTION
AM01475v1_noZen It is therefore suitable for the most demanding high efficiency converters. Product status link STU10NM60N Product summary Order code STU10NM60N Marking 10NM60N Package IPAK Packing Tube DS14497 - Rev 1 - November 2023 For further information contact your local STMicroelectronics sales office. STU10NM60N Electrical ratings 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter VGS Gate-source voltage Drain current (continuous) at TC = 25 °C ID Drain current (continuous) at TC = 100 °C IDM (1) Drain current (pulsed) PTOT Total power dissipation at TC = 25 °C IAR Avalanche current, repetitive or non-repetitive (pulse width limited by TJ max) EAS Single pulse avalanche energy (starting TJ = 25 °C, ID = IAR, VDD = 50 V) dv/dt (2) Peak diode recovery voltage slope Tstg Storage temperature range TJ Operating junction temperature range 1.
